In this paper, a performance comparison of MODFET Low Noise Amplifier design based on micro strip line technique is done. A RT Duroid substrate based design with specific dimensions of L = 9.4 mm and W = 2.1 mm is compared in performance with FR4 based design and performance is evaluated using parameters like noise figure and maximum gain. These comparisons are done by taking into account different combinations of performance parameters. Noise is inherent in this device and it is predominant particularly at higher frequencies, the reason for this behavior is it depends on the parameters like gate resistance, which is one of the important finding of this work. The low noise amplifier designed based on RT duriod has shown reasonable gain and low noise figure values, when compared with FR4 design. Layout of this design has been obtained and this work has been carried out using ADS software.

Keywords: Noise, Performance comparison, Noise Figure, Gate resistance, Maximum Gain