Analytical modeling of pinch resistor has been carried out in this paper using the simple model and JFET model. The results obtained through the simple model are compared with the JFET model, which shows that the JFET model is more roburst for the VLSI design. The analysis and design of ICs depend heavily on the utilization of suitable models for IC components. A device technologist designs for circuits applications while process technologist develops process to fabricate these devices. For the same channel width and doping concentration for N_d = 5x10¹⁶ /cm³ , the resistance of the pinch resistor 1.44 times greater than the N-welll device resistor, and for the doping concentration N_d ¹⁷/cm³ ,the resistance of the pinch resistor 1.35 times greater than the N-well device resistor.

Keywords: Wind Farm, Induction Generator, Point of Common Coupling (PCC), Voltage Source Converter (VSC), FlexibleAC  Transmission Systems (FACTS), Pulse Width Modulated (PWM) inverter.