CNTFET-based devices offer high mobility for near-ballistic transport, high carrier velocity for fast switching, as well as better electrostatic control due to the quasi one-dimensional structure of CNTs. This paper describes the work on modeling, performance benchmarking for nanoscale devices and circuits using carbon Nanotube field effect transistors (CNTFETs), with the aim of guiding nanoscale device and circuit design. In this paper we have successfully developed a compact model for MOSFET like Carbon Nano Tube Field Effect Transistor (CNTFET). The modeled CNTFET has been used to design logic gates which shows superior performance over MOSFET based logic gates and coaxially gated CNTFET logic gates. Hspice simulations have been performed on the designed logic gates and their output behaviors have been extensively studied. Finally a comparison in terms of power consumption and size of the proposed CNTFET vis-a-vis coaxially gated CNTFET and conventional MOSFET has been studied.

Key words Carbon Nanotube (CNT), CNT Field Effect Transistor (CNTFET), Chiral Vector, Coaxially gated, Compact modeling, logic gates, MOSFET.